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Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor PHE13009

GENERAL DESCRIPTION
The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - 24 A
Ptot Total power dissipation Tmb 25