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BC818-16
BC818-25
BC818-40
SOT-23 Transistor(NPN)
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23

Features
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage VCBO IC= 10A, IE=0 30 V
Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 25 V
Emitter-base breakdown voltage VEBO IE= 10A, IC=0 5 V
Collector cut-off current ICBO VCB= 25 V , IE=0 0.1 A

Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 A

hFE(1) VCE= 1V, IC= 100mA 100 630
DC current gain
hFE(2) VCE= 1V, IC= 300mA 60
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V
Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V
Base-emitter voltage VBE VCE=1V, IC= 500mA 1.2 V
Collecter capactiance Cob VCB=10V ,f=1MHz 6 pF
VCE= 5 V, IC= 50mA 170
Transition frequency fT MHz
f=100MHz

CLASSIFICATION OF hFE (1)
Rank BC818-16 BC818-25 BC818-40

Range 100-250 160-400 250-630

Marking 6E 6F 6G
BC818-16
BC818-25
BC818-40
SOT-23 Transistor(NPN)
Typical Characteristics