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STQ1HNC60
N-CHANNEL 600V - 7 - 0.4A TO-92
PowerMeshTMII MOSFET
PRELIMINARY DATA

TYPE VDSS RDS(on) ID

STQ1HNC60 600 V <8 0.4 A
s TYPICAL RDS(on) = 7
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
TO-92
DESCRIPTION
Using the latest high voltage MESH OVERLAYTMII
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM
coupled with the Company's proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s SWITCH MODE LOW POWER SUPPIES

(SMPS)
s CFL

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage