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STB180N55F3
STP180N55F3
N-channel 55V - 3.2m - 120A - D2PAK/TO-220
STripFETTM Power MOSFET
Features
Type VDSS RDS(on) ID Pw
(1)
STB180N55F3 55V 3.5m 120A 330W
(1)
STP180N55F3 55V 3.8m 120A 330W
1. Value limited by wire bonding 3 3
2 1
1
Ultra low on-resistance
100% avalanche tested TO-220 D2PAK
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique "single feature sizeTM"
strip-based process with less critical alignment Internal schematic diagram
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Application
Switching applications
Order codes
Part number Marking Package Packaging
2PAK
STB180N55F3 180N55F3 D Tape & reel
STP180N55F3 180N55F3 TO-220 Tube
June 2007 Rev 2 1/14
www.st.com 14
Contents STB180N55F3 - STP180N55F3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STB180N55F3 - STP180N55F3 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 55 V
VGS Gate-source voltage