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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUX87-1100

GENERAL DESCRIPTION
High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the
dynamic focus circuit of televisions and monitors.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1100 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 0.5 A
ICM Collector current peak value - 1 A
Ptot Total power dissipation Tmb 25