2sd879.pdf part of LGE 2sd879 2sd879.pdf, . Electronic Components Datasheets Active components Transistors LGE 2sd879.pdf text manual preview

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2SD879(NPN)
TO-92 Bipolar Transistors

1. EMITTER TO-92
2. COLLECTOR

3. BASE

Features
In applications where two NiCd batteries are used to provide
2.4V, two 2SD879s are used.
The charge time is approximately 1 second faster Than that of
germanium transistors.
Less power dissipation because of low Collector-to-Emitter
Voltage VCE(sat), permitting more flashes of light to be emitted.
Small package and large allowable collector dissipation (TO-92,
PC=750mW).
Large current capacity and highly resistant to break-down.
Excellent linearity of hFE in the region from low current to high
Dimensions in inches and (millimeters)
current. Power amplifier applications

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO 10 V
Collector-Emitter Voltage
VCEX 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current