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PT4410
30V N-Channel Enhancement Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@12A = 10.5m
RDS(ON), [email protected], Ids@12A = 15m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
Package Dimensions
D D D D
8 7 6 5
1 2 3 4
S S S G
Millimeter Millimeter
REF.
REF. Min. Max. Min. Max.
A 5.80 6.20 M 0.10 0.25
B 4.80 5.00 H 0.35 0.49
C 3.80 4.00 L 1.35 1.75
D 0