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SEMICONDUCTOR KTA1381
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH-DEFINITION CRT DISPLAY, A
VIDEO OUTPUT APPLICATIONS. B D
C
E
FEATURES
F
High breakdown voltage : VCEO 300V.
Small reverse transfer capacitance and G
excellent high frequency characteristic.
H
: Cre=2.3pF (VCB=30V, f=1MHz) DIM MILLIMETERS
J
Complementary KTC3503. A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
E 3.5
F _
11.0 + 0.3
G 2.9 MAX
M
MAXIMUM RATING (Ta=25 ) H 1.0 MAX
J 1.9 MAX
CHARACTERISTIC SYMBOL RATING UNIT N
O
P
K _
0.75 + 0.15
1 2 3 L _
15.50 + 0.5
_
2.3 + 0.1
Collector-Base Voltage VCBO -300 V M
N _
0.65 + 0.15
1. EMITTER O 1.6
Collector-Emitter Voltage VCEO -300 V P 3.4 MAX
2. COLLECTOR
3. BASE
Emitter-Base Voltage VEBO -5 V
DC IC -100
Collector Current mA TO-126
Pulse ICP -200
Collector Power Ta=25 1.5
PC W
Dissipation Tc=25 7
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-200V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-10V, IC=-10mA 60 - 200
Transition Frequency fT VCE=-30V, IC=-10mA - 150 - MHz
Collector Output Capacitance Cob VCB=-30V, IE=0, f=1MHz - 3.1 - pF
Reverse Transfer Capacitance Cre VCB=-30V, IE=0, f=1MHz - 2.3 - pF
Collector-Emitter Saturation Voltage VCE(sat) IC=-20mA, IB=-2mA - - -0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=-20mA, IB=-2mA - - -1.0 V
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -300 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -300 - - V
Base-Emitter Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
Note : hFE Classification O:60 120, Y:100 200
2003. 7. 24 Revision No : 3 1/3
KTA1381
I C - VCE I C - VCE
-20 -10
I B =-140