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TIP120 Series
PNP/NPN Silicon Power Transistor
P b Lead(Pb)-Free
1
FEATURES: 2
3
* Medium Power Complementary silicon transistors 1. BASE
* TIP120,121,122 Darlington TRANSISTOR (NPN) 2. COLLECTOR
3. EMITTER
* TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220
MAXIMUM RATINGS (TA=25 unless otherwise noted)
TIP120 TIP121 TIP122
Symbol Parameter Units
TIP125 TIP126 TIP127
VCBO Collector-Base Voltage 60 80 100 V
VCEO Collector-Emitter Voltage 60 80 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 2 W
R JA Thermal Resistance Junction to Ambient 62.5 /W
R JC Thermal Resistance Junction to Case 1.92 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
TIP120,TIP125 60
Collector-base breakdown voltage TIP121,TIP126 V(BR)CBO IC=1mA, I E=0 80 V
TIP122,TIP127 100
TIP120,TIP125 60
Collector-emitter breakdown voltage TIP121,TIP126 VCEO(SUS) IC=30mA, I B=0 80 V
TIP122,TIP127 100
TIP120,TIP125 VCB=60V, I E=0
Collector cut-off current TIP121,TIP126 ICBO VCB=80V, I E=0 0.2 mA
TIP122,TIP127 VCB=100V, I E =0
TIP120,TIP125 VCE=30V, I B=0
Collector cut-off current TIP121,TIP126 ICEO VCE=40V, I B=0 0.5 mA
TIP122,TIP127 VCE=50V, I B=0
Emitter cut-off current IEBO VEB=5V, I C=0 2 mA
hFE(1) VCE=3V, I C=0.5A 1000
DC current gain
hFE(2) VCE=3V, I C=3A 1000
IC=3A, IB =12mA 2
Collector-emitter saturation voltage VCE (sat) V
IC=5A, IB =20mA 4
Base-emitter voltage VBE VCE=3V, IC =3A 2.5 V
TIP125,TIP126,TIP127 VCB=10V, IE =0A 300
Output Capacitance C ob pF
TIP120,TIP121,TIP122 f = 0.1MHz 200
WEITRON 1/3 19-Aug-10
http://www.weitron.com.tw
TIP120 Series
Typical Characteristics TIP120,121,122,125,126,127
WEITRON 2/3 19-Aug-10
http://www.weitron.com.tw
TIP120 Series
TO-220 Outline Dimensions unit:mm
D
A TO-220
C1 Dim M in M ax