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Advance Technical Information
GigaMOSTM IXFN160N30T VDSS = 300V
Power MOSFET ID25 = 130A
RDS(on) 19m
trr 200ns
N-Channel Enhancement Mode
Avalanche Rated miniBLOC, SOT-227
Fast Intrinsic Diode E153432
S
Symbol Test Conditions Maximum Ratings G
VDSS TJ = 25