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STP5NB40
STP5NB40FP
N-CHANNEL 400V - 1.47 - 4.7A TO-220/TO-220FP
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID

STP5NB40 400 V < 1.8 4.7 A
STP5NB40FP 400 V < 1.8 4.7 A
s TYPICAL RDS(on) = 1.47
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES 3 3
2 2
s GATE CHARGE MINIMIZED 1 1

TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP5NB40 STP5NB40FP
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain-gate Voltage (RGS = 20 k) 400 V
VGS Gate- source Voltage