ces2307a.pdf part of CET ces2307a ces2307a.pdf, . Electronic Components Datasheets Active components Transistors CET ces2307a.pdf text manual preview

Text preview for : ces2307a.pdf part of CET ces2307a . Electronic Components Datasheets Active components Transistors CET ces2307a.pdf

Back to : ces2307a.pdf | Home

CES2307A
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -3.2A, RDS(ON) = 78m @VGS = -10V.
RDS(ON) = 120m @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead-free plating ; RoHS compliant.

SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS