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CES2321A
P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

-20V, -3.8A, RDS(ON) = 55m @VGS = -4.5V.
RDS(ON) = 62m @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).

Rugged and reliable.
D
Lead-free plating ; RoHS compliant.
SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS