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STD2NB50
STD2NB50-1
N-CHANNEL 500V - 5 - 1A DPAK / IPAK
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID
STD2NB50 500V < 6 1A
STD2NB50-1 500V < 6 1A
s TYPICAL RDS(on) = 5 3
s 100% AVALANCHE TESTED 3 2
1
s VERY LOW INTRINSIC CAPACITANCES 1
s ADD SUFFIX "T4" FOR ORDERING IN TAPE &
REEL DPAK IPAK
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM INTERNAL SCHEMATIC DIAGRAM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s SWITH MODE POWER SUPPLIES (SMPS)
s LIGHTING FOR INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain-gate Voltage (RGS = 20 k) 500 V
VGS Gate- source Voltage