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MMDT5401
Dual Transistor (NPN/PNP)
SOT-363
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available(MMDT 5551)
Ideal for Medium Power Amplification and Switching
MRKING:K4M
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Dimensions in inches and (millimeters)
VCBO Collector- Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.2 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A , IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-120 V , IE=0 -0.05 A
Emitter cut-off current IEBO VEB=-3V , IC=0 -0.05 A
hFE(1) VCE=-5 V, IC= -1mA 50
DC current gain hFE(2) VCE=-5 V, IC= -10mA 60 240
hFE(3) VCE=-5 V, IC= -50mA 50
VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V
VBE(sat)1 IC= -10 mA, IB=-1mA -1 V
Base-emitter saturation voltage
VBE(sat)2 IC= -50 mA, IB=-5mA -1 V
Transition frequency fT VCE= -10V, IC= -10mA,f = 100MHz 100 MHz
Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 6 pF
Noise Figure NF VCE= -5.0V, IC= -200A, 8.0 dB
RS= 10,f = 1.0kHz
MMDT5401
Dual Transistor (NPN/PNP)
Typical Characteristics