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PZT2907A
PNP Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4 SOT-223
P b Lead(Pb)-Free 4
1. BASE
BASE
2.COLLECTOR
1 1
3.EMITTER 2
4.COLLECTOR 3
3
EM ITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -60 Vdc
Collector-Base Voltage VCBO -60 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current (DC) IC(DC) -600 mAdc
Total Device Disspation TA=25 C PD 1.5 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
Device Marking
PZT2907A=2907A
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) V(BR)CEO -60 - Vdc
Collector-Base Breakdown Voltage (IC=-10