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STS5NS150
N-CHANNEL 150V - 0.075 - 5A SO-8
LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
STS5NS150 150 V <0.1 5A
s TYPICAL RDS(on) = 0.075
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics SO-8
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 150 V
VDGR Drain-gate Voltage (RGS = 20 k) 150 V
VGS Gate- source Voltage