Text preview for : irf520.pdf part of ST irf520 . Electronic Components Datasheets Active components Transistors ST irf520.pdf
Back to : irf520.pdf | Home
IRF520
N-CHANNEL 100V - 0.115 - 10A TO-220
LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
IRF520 100 V <0.27 10 A
s TYPICAL RDS(on) = 0.115
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
3
175 oC OPERATING TEMPERATURE 2
s)
s
1
DESCRIPTION TO-220
t(
uc
This MOSFET series realized with STMicroelectronics
unique STripFETTM process has specifically been
designed to minimize input capacitance and gate charge.
d
ro
It is therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer applications. It is INTERNAL SCHEMATIC DIAGRAMP
te
also intended for any applications with low gate drive
requirements.
le
so
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s REGULATOR
- Ob
(s)
s DC-DC & DC-AC CONVERTERS
ct
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
du
ABS, AIR-BAG, LAMPDRIVERS, etc.)
o
Pr
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
e
let
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
o
bs
VGS Gate- source Voltage