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2SJ668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII)
2SJ668
Relay Drive, DC/DC Converter and Motor Drive
Applications Unit: mm
4 V gate drive
Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = -100 A (max) (VDS = -60 V)
Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
Absolute Maximum Ratings (Ta = 25