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KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR
DESIGNED FOR LOW POWER AUDIO
TO-126
AMPLIFIER AND LOW CURRENT
HIGH SPEED SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage : KSE180 VCBO 60 V
: KSE181 80 V
: KSE182 100 V
Collector-Emitter Voltage VCEO
: KSE180 40 V
: KSE181 60 V
: KSE182 80 V
Emitter-Base Voltage VEBO 7 V
Collector Current (DC) IC 3 A 1. Emitter 2. Collector 3. Base
Collector Current (Pulse) IC 6 A
Base Current (DC) IB 1 A
)
Collector Dissiapation (T A=25 PC 1.5 W
Collector Dissipation ( T =25) PC 12.5 W
C
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150
ELECTRICAL CHARACTERISTICS (Tc=25)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage
: KSE180 VCEO(sus) IC = 10mA, IB = 0 40 V
: KSE181 60 V
: KSE182 80 V
Collector Cutoff Current : KSE180 ICBO VCB = 60V, IB = 0 0.1 uA
: KSE181 VCB = 80V, IE = 0 0.1 uA
: KSE182 VCB = 100V, IE = 0 0.1 uA
: KSE180
VCB = 60V, IE = 0, T C = 150 0.1 mA
: KSE181 VCB = 80V, I = 0, T = 150 0.1 mA
= 100V, I = 0, T = 150
E C
: KSE182 VCB E C 0.1 mA
Emitter Cutoff Current IEBO VBE = 7V, IC = 0 0.1 uA
DC Current Gain hFE VCE = 1V, IC = 100mA 50 250
VCE = 1V, IC = 500mA 30
VCE = 1V, IC = 1.5A 12
Collector Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA 0.3 V
IC = 1.5A, IB = 150mA 0.9 V
IC = 3A, IB = 600mA 1.7 V
Base-Emitter Saturation Voltage VBE(sat) IC = 1.5A, IB = 150mA 1.5 V
IC = 3A, IB = 600mA 2.0 V
Base Emitter On Voltage VBE(on) VCE = 1V, IC = 500mA 1.2 V
Current Gain-Bandwidth Product fT VCE = 10V, IC = 100mA, f = 10MHz 50 MHz
Output Capacitance COB VCB = 10V, IE = 0, f = 0.1MHz 30 pF
KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR
KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR