pht6n06lt_2.pdf part of Philips pht6n06lt 2 pht6n06lt_2.pdf, . Electronic Components Datasheets Active components Transistors Philips pht6n06lt

Text preview for : pht6n06lt_2.pdf part of Philips pht6n06lt 2 . Electronic Components Datasheets Active components Transistors Philips pht6n06lt_2.pdf

Back to : pht6n06lt_2.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor PHT6N06LT
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 55 V
suitable for surface mounting. ID Drain current (DC) Tsp = 25