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SSD20N06-90D
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente 19A, 60V, RDS(ON) 94 m

RoHS Compliant Product
A suffix of "-C" specifies halogen free
TO-252(D-Pack)
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low RDS(on) and to ensure minimal power loss and
heat dissipation. Typical applications are DC-DC converters and power
management in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.

FEATURES
Low RDS(on) provides higher efficiency and extends battery life A
B C
Low thermal impedance copper leadframce DPAK saves D
board space
Fast switching speed
High performance trench technology GE

PRODUCT SUMMARY
K HF N
PRODUCT SUMMARY O
P
VDS(V) RDS(on) m( ID(A) M J

94 @VGS= 10V 19 Drain
60
109 @VGS= 4.5V 18

Gate REF.
Millimeter
REF.
Millimeter
Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
Source F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

ABSOLUTE MAXIMUM RATINGS (TA = 25