Text preview for : stb1277.pdf part of LGE stb1277 . Electronic Components Datasheets Active components Transistors LGE stb1277.pdf
Back to : stb1277.pdf | Home
STB1277(PNP)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. COLLECTOR
3. BASE
Features
Audio power amplifier
High current application
High current : IC=-2A
Complementary pair with STD1862
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous -2 A
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage VCBO IC= -100uA, IE=0 -30 V
Collector-emitter breakdown voltage VCEO IC= -1mA , IB=0 -30 V
Emitter-base breakdown voltage VEBO IE= -1mA, IC=0 -5 V
Collector cut-off current ICBO VCB= -30 V, IE=0 -0.1 uA
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 uA
DC current gain hFE VCE=-2V, IC= -500mA 100 320
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.8 V
Base-emitter on voltage VBE(on) VCE=-2V, IC= -500mA -1 V
Transition frequency fT VCE= -5V, IC= -50mA 170 MHz
Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHZ 48 pF
CLASSIFICATION hFE
Rank O Y
Range 100-200 160-320
STB1277(PNP)
TO-92 Bipolar Transistors
Typical Characteristics