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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ303B

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1050 V
VCBO Collector-Base voltage (open emitter) - 1050 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Tmb 25