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SEMICONDUCTOR KTC3202
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
A
: hFE(2)=25(Min.) at VCE=6V, IC=400mA.
Complementary to KTA1270. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
_
CHARACTERISTIC SYMBOL RATING UNIT H J 14.00 + 0.50
F F K 0.55 MAX
L 2.30
Collector-Base Voltage VCBO 35 V +0.10
0.30 - 0.05
M
N 1.00
Collector-Emitter Voltage VCEO 30 V
C
1 2 3
L
M
Emitter-Base Voltage VEBO 5 V 1. EMITTER
2. COLLECTOR
Collector Current IC 500 mA 3. BASE
Base Current IE -500 mA
Collector Power Dissipation PC 625 mW TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
hFE(1) (Note) VCE=1V, IC=100mA 70 - 400
DC Current Gain
hFE(2) (Note) VCE=6V, IC=400mA 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Voltage VBE VCE=1V, IC=100mA - 0.8 1.0 V
Transition Frequency fT VCE=6V, IC=20mA - 300 - MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE(1) Classification 0:70 140, Y:120 240, GR:200~400
hFE(2) Classification 0:25Min., Y:40Min.
2005. 7. 18 Revision No : 0 1/2
KTC3202
2005. 7. 18 Revision No : 0 2/2