buk581-60a_1.pdf part of Philips buk581-60a 1 buk581-60a_1.pdf, . Electronic Components Datasheets Active components Transistors Philips buk581-60a

Text preview for : buk581-60a_1.pdf part of Philips buk581-60a 1 . Electronic Components Datasheets Active components Transistors Philips buk581-60a_1.pdf

Back to : buk581-60a_1.pdf | Home

Philips Semiconductors Product Specification

PowerMOS transistor BUK581-60A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 60 V
suitable for surface mount ID Drain current (DC) 1.5 A
applications. Ptot Total power dissipation 1.5 W
The device is intended for use in Tj Junction temperature 150