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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW96
HF/VHF power transistor
Product specification August 1986
Philips Semiconductors Product specification
HF/VHF power transistor BLW96
DESCRIPTION conditions. Transistors are supplied
in matched hFE groups.
N-P-N silicon planar epitaxial
transistor intended for use in class-A, The transistor has a 1/2" flange
AB and B operated high power envelope with a ceramic cap. All
industrial and military transmitting leads are isolated from the flange.
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
QUICK REFERENCE DATA
R.F. performance up to Th = 25