2sa1179_sot-23.pdf part of LGE 2sa1179 sot-23 2sa1179_sot-23.pdf, . Electronic Components Datasheets Active components Transistors LGE 2sa1179

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2SA1179
SOT-23 Transistor(PNP)

1. BASE
SOT-23
2. EMITTER
3. COLLECTOR

Features
High breakdown voltage

MARKING: M

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -55 V
VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -150 mA
Pc Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-10u A,IE=0 -55 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE=-10 u A,IC=0 -5 V

Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 uA

Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 uA

DC current gain hFE VCE=-6V,IC=-1mA 200 400

Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V

Base -emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1.0 V

Transition frequency fT VCE=-6V,IC=-10mA 180 MHz

Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 4 pF
2SA1179
SOT-23 Transistor(PNP)

Typical Characteristics