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2SC4003(NPN)
TO-251/TO-252-2L Transistor
TO-251

1. BASE


2. COLLECTOR


3. EMITTER

1 2 3

Features
High hFE hFE=60 to 200
low VCE(sat) VCE(sat)=0.6V

MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L
Symbol Parameter Value Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10