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SEMICONDUCTOR BFQ31
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
L B L
DIM MILLIMETERS
A _
2.93 + 0.20
MAXIMUM RATING (Ta=25 ) B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
CHARACTERISTIC SYMBOL RATING UNIT
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
Collector-Base Voltage VCBO 30 V H 0.95
J 0.13+0.10/-0.05
Collector-Emitter Voltage VCEO 15 V K 0.00 ~ 0.10
L 0.55
P P
Emitter-Base Voltage VEBO 3 V M 0.20 MIN
N 1.00+0.20/-0.10
Collector Current IC 100 mA
N
C
P 7
J
Emitter Current IE -100 mA M
K
Collector Power Dissipation PC 200 mW
1. EMITTER
Junction Temperature Tj 150 2. BASE
3. COLLECTOR
Storage Temperature Range Tstg -65 150
SOT-23
Marking
Lot No.
Type Name
S2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V(BR)CEO IC=3mA, IB=0 15 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=1 A, IE=0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 3.0 - - V
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 10 nA
DC Current Gain hFE VCE=1V, IC=3mA 20 - -
Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA - - 1.0 V
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.4 V
Transition Frequency fT IC=4mA, VCE=10V, f=100MHz 600 - - MHz
Collector Input Capacitance Cib VEB=0.5V, IC=0, f=1MHz - - 2.0 pF
VCB=0V, IE=0, f=1MHz - - 3.0
Collector Output Capacitance Cob pF
VCB=10V, IE=0, f=1MHz - - 1.7
VCE=6V, IC=1mA,
Noise Figure NF - - 6.0 dB
Rg=400 , f=60MHz
1998. 6. 15 Revision No : 1 1/1