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BUW48
BUW49
HIGH POWER NPN SILICON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s VERY LOW SATURATION VOLTAGE AND
HIGH GAIN
APPLICATION
s SWITCHING REGULATORS 3
2
s MOTOR CONTROL
1
s HIGH FREQUENCY AND EFFICENCY
CONVERTERS
TO-218
DESCRIPTION
The BUW48 and BUW49 are Multiepitaxial planar
NPN transistor in TO-218 plastic package.
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment. INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUW48 BUW49 Unit
V CEV Collector-emitter Voltage (V BE = -1.5V) 120 160 V
V CEO Collector-emitter Voltage (I B = 0) 60 80 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 30 A
I CM Collector Peak Current 45 40 A
IB Base Current 8 6 A
I BM Base Peak Current 12 10 A
P tot Total Power Dissipation at T case < 25 o C 150 W
o
T stg Storage Temperature -65 to 175 C
o
Tj Max Operating Junction Temperature 175 C
July 1997 1/4
BUW48 / BUW49
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEX Collector Cut-off V CE = V CEX VBE = -1.5V 1 mA
Current V CE = V CEX V BE = -1.5V T c =125 o C 3 mA
I EBO Emitter Cut-off V EB = 5 V 1 mA
Current (I C = 0)
V CEO(sus) Collector-Emitter I C = 0.2A L = 25 mH for BUW48 60 V
Sustaining Voltage for BUW49 80 V
V EB0 Emitter-base I E = 50 mA 7 V
Voltage (I c = 0)
V CE(sat) Collector-Emitter IC = 20A IB = 2A for BUW48 0.6 V
Saturation Voltage IC = 40A IB = 4A for BUW49 1.4 V
IC = 15A IB = 1.5A for BUW48 0.5 V
IC = 30A IB = 3A for BUW49 1.2 V
V BE(sat) Base-Emitter I C = 40A I B = 4A for BUW48 2.1 V
Saturation Voltage I C = 30A I B = 3A for BUW49 2 V
fT Transition Frequency I C = 1A VCE = 15V f = 15 MHz 8 MHz
RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t on Turn-on Time for BUW48 1.2 1.5