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S9012
PNP Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES Collector Dim Min Max
3 3
A 2.800 3.040
Power dissipation 1 B 1.200 1.400
1
PCM : 0.3 W 2 Base C 0.890 1.110
Collector Current D 0.370 0.500
G 1.780 2.040
ICM : - 0.5 A A 2
Emitter H 0.013 0.100
L
Collector-base voltage
J 0.085 0.177
V(BR)CBO : - 40 V 3
K 0.450 0.600
Top View B S
Operating & storage junction temperature 1 2 L 0.890 1.020
O O
Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500
V G
V 0.450 0.600
All Dimension in mm
C
D H J
K
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= -100 A IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100 A IC=0 -5 V
Collector cut-off current ICBO VCB= - 40V , IE=0 -0.1 A
Collector cut-off current ICEO VCE= - 20V , IB=0 -0.1 A
Emitter cut-off current IEBO VEB= - 5V , IC=0 - 0.1 A
HFE(1) VCE= -1V , IC=- 50 mA 120 400
DC current gain
HFE(2) VCE= -1V , IC= -500mA 40
Collector-emitter saturation voltage VCE(sat) IC= -500 mA, IB=- 50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC= -500 mA, IB=- 50m A -1.2 V
VCE= - 6V, IC= - 20mA
Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400
DEVICE MARKING S9012=2T1
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
17-Dec-2007 Rev.B Page 1 of 1