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STW80NF10
N-CHANNEL 100V - 0.012 - 80A TO-247
LOW GATE CHARGE STripFETTM POWER MOSFET

TYPE VDSS RDS(on) ID

STW80NF10 100 V < 0.015 80 A
s TYPICAL RDS(on) = 0.012
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION 3
2
1

TO-247
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary INTERNAL SCHEMATIC DIAGRAM
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.

APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS

s UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage