Text preview for : bfq68_cnv_2.pdf part of Philips bfq68 cnv 2 . Electronic Components Datasheets Active components Transistors Philips bfq68_cnv_2.pdf
Back to : bfq68_cnv_2.pdf | Home
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ68
NPN 4 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ68
DESCRIPTION PINNING
NPN transistor mounted in a four-lead PIN DESCRIPTION
dual-emitter SOT122A envelope with
1 collector
a ceramic cap. All leads are isolated fpage 4
from the stud. Diffused 2 emitter
emitter-ballasting resistors and the 3 base 1 3
application of gold sandwich 4 emitter
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features very 2
high output voltage capabilities. Top view MBK187
It is primarily intended for final stages
in MATV system amplifiers, and is
also suitable for use in low power Fig.1 SOT122A.
band IV and V equipment.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCEO collector-emitter voltage open base - 18 V
IC collector current - 300 mA
Ptot total power dissipation up to Tc = 110