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MMBT5088
MMBT5089
Low Noise NPN Transistor COLLECTOR
3 3
Surface Mount 1
1
P b Lead(Pb)-Free BASE 2

2 SOT-23
EMITTER

Maximum Ratings
Rating Symbol 5088LT1 5089LT1 Unit
Collector-Emitter Voltage V CE O 30 25 Vdc
Collector-B as e Voltage V CB O 35 30 Vdc
E m itter-B as e Voltage VE B O 4.5 Vdc
Collector Current-Continuous IC 50 m Adc

Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dis s ipation FR -5 B oard (1 ) mW
T A=2 5 C PD 225
Derate above 2 5 C 1.8 m W/ C
Ther m al Res is tance, J unction to Am bient R JA 556 C/ W
Total Device Dis s ipation mW
Alum ina S ubs trate, (2 ) T A=2 5 C PD 300
Derate above 2 5 C 2.4 m W/ C
Ther m al Res is tance, J unction to Am bient R JA 417 C/ W
J unction and S torage, Tem perature T J, Ts tg -5 5 to +1 5 0 C

Device Marking
MMBT5088=1Q ; MMBT5089=1R

Electrical Characteristics (TA=25