am1517.pdf part of ST am1517 am1517.pdf, . Electronic Components Datasheets Active components Transistors ST am1517.pdf text manual preview

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AM1517-012
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION

.
.
EMITTER SITE BALLASTED
:1 VSWR CAPABILITY

.
.
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING

. METAL/CERAMIC HERMETIC PACKAGE
POUT = 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042)
hermeticallysealed
ORDER CODE BRANDING
AM1517-012 1517-12

PIN CONNECTION

DESCRIPTION
The AM1517-012 power transistor is designed spe-
cifically for Satellite communications applications
in the 1.5 - 1.7 GHz frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a Refractory/Gold metallization system.
The AM1517-012 is supplied in the AMPACTM Her- 1. Collector 3. Emitter
metic/Ceramic package with internal Input/Output 2. Base 4. Base
matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25