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BD135/BD137/BD139(NPN)
TO-126 Transistor
TO-126
2.500
7.400
7.800 1.100 2.900
1.500
1. EMITTER
3.900
3.000
4.100
3.200
2. COLLECTOR 10.60 0 0.000
11.00 0 0.300
3. BASE
2.100
3 2.300
2 1.170
1.370
Features
1 15.30 0
15.70 0
High Current(1.5A)
0.660
0.860
Low Voltage(80V) 0.450
0.600
2.290 TYP
4.480
4.680
MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters)
Value
Symbol Parameter Units
BD135 BD137 BD139
VCBO Collector-Base Voltage 45 60 80 V
VCEO Collector-Emitter Voltage 45 60 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1.5 A
PC Collector power dissipation 1.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
BD135 45
Collector-base breakdown voltage V(BR)CBO Ic=100