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SEMICONDUCTOR KF50N06P
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for active power factor
E G DIM MILLIMETERS
correction , electronic lamp ballasts based on half bridge topology and A _
9.9 + 0.2
B
B 15.95 MAX
switching mode power supplies. Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
FEATURES K _
P F 2.8 + 0.1
VDSS = 60V, ID = 50A M G 3.7
L
H 0.5+0.1/-0.05
Drain-Source ON Resistance : J I 1.5
RDS(ON) =17m (Max.) @VGS = 10V D J _
13.08 + 0.3
N N H K 1.46
Qg(typ.) = 39.5nC
L _
1.4 + 0.1
M _
1.27 + 0.1
N _
2.54 + 0.2
O _
4.5 + 0.2
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) 1 2 3 1. GATE P _
2.4 + 0.2
2. DRAIN Q _
9.2 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE

Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS