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BCP156
NPN Silicon
Elektronische Bauelemente
Planar High Performance Transistor
RoHS Compliant Product
SOT-89
Description

The BCP156 is designed for general purpose
switching and amplifier applications.

Features
* 3 Amp Continuous Current
* 60 Volt VCEO
* Low Saturation Voltage

Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 4.4 4.6 G 3.00 REF.
B 4.05 4.25 H 1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L 5 q TYP.
M 0.70 REF.
o
Absolute Maximum Ratings at TA=25 C
Symbol Parameter Value Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
Collector Current (DC) 3
IC A
Collector Current (Pulse) 6
PD Total Power Dissipation 1.2 W
TJ,Tstg Junction and Storage Temperature -55~+150
O
C
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 80 - - V I C=100