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SEMICONDUCTOR KRC851E~KRC856E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B

B1

FEATURES
With Built-in Bias Resistors.
1 6 DIM MILLIMETERS




C
Simplify Circuit Design. A _
1.6 + 0.05




A1
_




A
A1 1.0 + 0.05
Reduce a Quantity of Parts and Manufacturing Process. 2 5 _




C
B 1.6 + 0.05
High Packing Density. B1 _
1.2 + 0.05




D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P P
P 5
EQUIVALENT CIRCUIT BIAS RESISTOR VALUES
R1(k