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SEMICONDUCTOR KTA1759
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
A
C
H
G
DIM MILLIMETERS
B
J
E
A 4.70 MAX
_
2.50 + 0.20
MAXIMUM RATING (Ta=25 ) B
D C 1.70 MAX
D
CHARACTERISTIC SYMBOL RATING UNIT D 0.45+0.15/-0.10
K
E 4.25 MAX
F F F _
1.50 + 0.10
Collector-Base Voltage VCBO -400 V G 0.40 TYP
H 1.75 MAX
Collector-Emitter Voltage VCEO -400 V J 0.75 MIN
K 0.5+0.10/-0.05
Emitter-Base Voltage VEBO -7 V 1 2 3
Collector Current IC -100 mA
1. BASE
PC 2. COLLECTOR (HEAT SINK)
500 mW
3. EMITTER
Collector Power Dissipation
PC* 1 W
Junction Temperature Tj 150