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SEMICONDUCTOR KML0D6NP20EA
TECHNICAL DATA N and P-Ch Trench MOSFET
General Description
It's Mainly Suitable for Load Switching Cell Phones, Battery Powered
B
Systems and Level-Shifter.
B1
1 6 DIM MILLIMETERS
C
_
FEATURES A 1.6 + 0.05
A1
A
A1 _
1.0 + 0.05
2 5
N-Channel
C
B _
1.6 + 0.05
B1 _
1.2 + 0.05
D
: VDSS=20V, ID=600mA (RDS(ON)=0.70 @ VGS=4.5V). C 0.50
3 4
_
: VDSS=20V, ID=500mA (RDS(ON)=0.85 @ VGS=2.5V). D 0.2 + 0.05
H _
0.5 + 0.05
: VDSS=20V, ID=350mA (RDS(ON)=1.25 @ VGS=1.8V). J _
0.12 + 0.05
P P
P 5
P-Channel
: VDSS=-20V, ID=-400mA (RDS(ON)=1.2 @ VGS=-4.5V).
H
: VDSS=-20V, ID=-300mA (RDS(ON)=1.6 @ VGS=-2.5V).
J
: VDSS=-20V, ID=-150mA (RDS(ON)=2.7 @ VGS=-1.8V). 1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
TES6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Marking
Drain-Source Voltage VDSS 20 -20 V
Gate-Source Voltage VGSS 6 6 V Lot No.
DC @TA=25 515 -390
ID*
Type Name
Drain Current DC @TA=85
Pulsed IDP
370
650
-280
-650
mA A1
Source-Drain Diode Current IS 450 -450
Drain Power Dissipation P D* 280 280 mW
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 446 /W
Note 1) *Surface Mounted on FR4 Board, t 5sec
PIN CONNECTION (TOP VIEW)
S1 1 6 D1 1 6
G1 2 5 G2 2 5
D2 3 4 S2 3 4
2008. 9. 10 Revision No : 3 1/6
KML0D6NP20EA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
ID=250 A, VGS=0V N-Ch 20 - -
Drain-Source Breakdown Voltage BVDSS V
ID=-250 A, VGS=0V P-Ch -20 - -
VGS=0V, VDS=16V N-Ch - 0.3 100
Drain Cut-off Current IDSS nA
VGS=0V, VDS=-16V P-Ch - -0.3 -100
N-Ch - 0.5 1.0
Gate Leakage Current IGSS VGS= 4.5V, VDS=0V A
P-Ch - 1.0 2.0
VDS=VGS, ID=250 A N-Ch 0.45 - 1.0
Gate Threshold Voltage Vth V
VDS=VGS, ID=-250 A P-Ch -0.45 - -1.0
VGS=4.5V, ID=600mA N-Ch - 0.41 0.70
VGS=-4.5V, ID=-350mA P-Ch - 0.80 1.20
VGS=2.5V, ID=500mA N-Ch - 0.53 0.85
Drain-Source ON Resistance RDS(ON)*
VGS=-2.5V, ID=-300mA P-Ch - 1.20 1.60
VGS=1.8V, ID=350mA N-Ch - 0.70 1.25
VGS=-1.8V, ID=-150mA P-Ch - 1.80 2.70
VGS=4.5V, VDS=5V N-Ch 700 - -
ON State Drain Current ID(ON)* mA
VGS=-4.5V, VDS=-5V P-Ch -700 - -
VDS=10V, ID=400mA N-Ch - 1.0 -
Forward Transconductance gfs* S
VDS=-10V, ID=-250mA P-Ch - 0.4 -
Source-Drain Diode Forward IS=150mA, VGS=0V N-Ch - 0.8 1.2
VSD* V
Voltage IS=-150mA, VGS=0V P-Ch - -0.8 -1.2
Dynamic
N-Ch - 750 -
Total Gate Charge Qg*
P-Ch - 1500 -
N-Ch
: VDS=10V, ID=250mA, VGS=4.5V N-Ch - 75 -
Gate-Source Charge Qgs* pC
P-Ch P-Ch - 150 -
: VDS=-10V, ID=-250mA, VGS=-4.5V
N-Ch - 225 -
Gate-Drain Charge Qgd*
P-Ch - 450 -
N-Ch N-Ch - 5 -
Turn-on Delay time td(on)* : VDD=10V, ID=200mA,
VGS=4.5V, RG=10 P-Ch - 5 -
P-Ch ns
N-Ch - 25 -
Turn-off Delay time td(off)* : VDD=-10V, VGS=-4.5V,
ID=-200mA, RG=10 P-Ch - 35 -
Note 2) *Pulse test : Pulse width 300 , Duty Cycle 2%.
2008. 9. 10 Revision No : 3 2/6
KML0D6NP20EA
N-Channel
Fig 1. ID - VDS Fig 2. RDS(on) - ID
Drain-Source On Resistance RDS(on) ()
1.0 4.0
VGS=2.5V
VGS=1.8V
0.8 3.2
Drain Current ID (A)
VGS=2.0V
0.6 2.4
VGS=5,4,3V
0.4 1.6
VGS=2.5V VGS=1.8V
0.2 0.8
VGS=1.0V
VGS=4.5V
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.2 0.4 0.6 0.8 1.0
Drain - Source Voltage VDS (V) Drain - Current ID (A)
Fig 3. ID - VGS Fig 4. RDS(ON) - Tj
Normalized Drain-Source On Resistance RDS(on) ()
1.0 1.6
VGS = 4.5V
-55 C ID = 350mA
0.8 1.4
Drain Current ID (A)
TC=125 C
25 C
0.6 1.2
0.4 1.0
0.2 0.8
0.0 0.6
0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125
Gate - Source Voltage VGS (V) Junction Temperature Tj ( C)
Fig 5. Vth - Tj Fig 6. IDR - VSDF
0.3 1000
Reverse Drain Current IDR (mA)
Gate Threshold Voltage Vth (V)
ID = 250