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PZT2907A
SOT-223 Transistor(PNP)
SOT-223
1. BASE
2. COLLECTOR
1
3. EMITTER

Features
Epitaxial planar die construction
Complementary PNP Type available(PZT2222A)

MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -10 nA
Emitter cut-off current IEBO VEB=-5V,IC=0 -50 nA
hFE(1) VCE=-10V,IC=-0.1mA 75
hFE(2) VCE=-10V,IC=-1mA 100
DC current gain hFE(3) VCE=-10V,IC=-10mA 100
hFE(4) VCE=-10V,IC=-150mA 100 300
hFE(5) VCE=-10V,IC=-500mA 50
VCE(sat) IC=-150mA,IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA -1.6 V
VBE(sat) IC=-150mA,IB=-15mA -1.3 V
Base-emitter saturation voltage
VBE(sat) IC=-500mA,IB=-50mA -2.6 V
Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz
Collector capacitance Cc VCB=-10V,IE=0,f=1MHz 8 pF
Emitter capacitance CE VEB=-2V,IC=0,f=1MHz 30 pF
Delay time td 12 nS
Rise time tr 30 nS
IC=-150mA IB1=- IB2=- 15mA
Storage time tS 300 nS
Fall time tf 65 nS
PZT2907A
SOT-223 Transistor(PNP)

Typical Characteristics