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STGB3NB60SD
N-CHANNEL 3A - 600V D2PAK
Power MESHTM IGBT

TYPE VCES VCE(sat) Ic

STGB3NB60SD 600 V <1.5 V 3A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s VERY LOW ON-VOLTAGE DROP (Vcesat)
s HIGH CURRENT CAPABILITY 3
s OFF LOSSES INCLUDE TAIL CURRENT 1

s INTEGRATED FREEWHEELING DIODE D2PAK
s SURFACE-MOUNTING D2PAK (TO-263) TO-263
POWER PACKAGE IN TAPE & REEL (suffix"T4")
(SUFFIX "T4")

DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed
INTERNAL SCHEMATIC DIAGRAM
an advanced family of IGBTs, the PowerMESHTM IGBTs,
with outstanding perfomances. The suffix "S" identifies a
family optimized to achieve minimum on-voltage drop for
low frequency applications (<1kHz).

APPLICATIONS
s GAS DISCHARGE LAMP

s STATIC RELAYS

s MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VGE Gate-Emitter Voltage