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A1015
SOT-23 Transistor(PNP)
1. BASE SOT-23
2. EMITTER
3. COLLECTOR
Features
High voltage and high current
VCEO:=-50V(min.),IC=-150mA(max.)
Excellent hFE Linearity
hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA
hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.)
Low niose: NF=1dB(Typ.) at f=1KHz
Complementary to C1815 Dimensions in inches and (millimeters)
MARKING: BA
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 125
Tstg Storage Temperature -55-125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100u A, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE= -100 u A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 uA
Collector cut-off current ICEO VCE= -50V , IB=0 -0.1 uA
Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 uA
DC current gain hFE VCE=-6V, IC= -2mA 130 400
Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V
Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V
VCE=-10V, IC= -1mA
Transition frequency fT 80 MHz
f=30MHz
CLASSIFICATION OF hFE
Rank L H
Range 130-200 200-400
A1015
SOT-23 Transistor(PNP)
Typical Characteristics