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2SB1116/1116A(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
High Collector Power Dissipation .
Complementary to 2SD1616/2SD1616A
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Collector-Base Voltage 2SB1116 -60
VCBO V
2SB1116A -80
Collector-Emitter Voltage 2SB1116 -50
VCEO V
2SB1116A -60
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -1 A Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.75 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
2SB1116 -60
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 V
2SB1116A -80
2SB1116 -50
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 V
2SB1116A -60
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -6 V
VCB=-60V,IE=0 2SB1116
Collector cut-off current ICBO -0.1 A
VCB=-80V,IE=0 2SB1116A
Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 A
hFE(1) VCE=-2V,IC=-0.1A 135 600
DC current gain
hFE(2) VCE=-2V,IC=-1A 81
Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-50mA -0.3 V
Base -emitter saturation voltage VBE(sat) IC=-1A,IB=-50mA -1.2 V
Base -emitter voltage VBE VCE=-2V,IC=-0.05A -0.6 -0.7 V
Transition frequency fT VCE=-2V,IC=-0.1A 70 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 25 pF
Turn-on time ton 0.07 us
VCC=-10V,IC=-0.1A,IB1=-IB2=-0.01A,
Storage time ts 0.7 us
VBE(Off)=2to3V
Fall time tf 0.07 us
CLASSIFICATION OF hFE(1)
Rank L K U
Range 135-270 200-400 300-600
2SB1116/1116A(PNP)
TO-92 Bipolar Transistors
Typical Characteristics