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2N6093
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE TO-217
DESCRIPTION:
The 2N6093 is a High Gain Linear RF
Power Amplifier Used in Class A or
Class B Applications With Individual
Ballast Emitter Resistor and Built in
Temperature Sensing Diode.
MAXIMUM RATINGS
IC 10 A
VCE 35 V
O
PDISS 83.3 W @ TC = 75 C
O O 1 = Emitter & Diode Cathode
TJ -65 C to +200 C
2 = Collector
O O
TSTG -65 C to +200 C 3 = Base
O 4 = Diode Anode
JC 1.50 C/W