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Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60H
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope. VDS Drain-source voltage 60 V
The device is intended for use in ID Drain current (DC) 60 A
automotive and general purpose Ptot Total power dissipation 150 W
switching applications. Tj Junction temperature 175