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TPT5610
TO-92L Transistor (PNP)
TO-92L
1. EMITTER
4.700
5.100
2. COLLECTOR
3. BASE 7.800
8.200
3
2
Features 1 0.600
0.800
Excellent linearity of Current Gain
0.350
Low saturation voltage 0.550
13.800
Complementary to TPT5609 14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage -25 V 1.270 TYP
2.440
VCEO Collector-Emitter Voltage -20 V 2.640
0.000 1.600
VEBO Emitter-Base Voltage -5 V 0.300
IC Collector Current -Continuous -1 A 0.350
3.700 0.450
PC Collector Power Dissipation 0.75 W 4.100 1.280
1.580
TJ Junction Temperature 150
4.000
Tstg Storage Temperature -55-150
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =-10