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SEMICONDUCTOR MMBTA44
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

HIGH VOLTAGE APPLICATION.

FEATURES
High Breakdown Voltage.
Collector Power Dissipation : PC=350mW.

MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-BaseVoltage VCBO 450 V
Collector-EmitterVoltage VCEO 400 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 300 mA
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 450 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 400 - - V
Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100 A, IB=0 450 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V
Collector Cut off Current ICBO VCB=400V, IE=0 - - 100 nA
Collector Cut off Current ICES VCE=400V, IB=0 - - 500 nA
Emitter Cutoff Current IEBO VEB=4V, IC=0 - - 100 nA
VCE=10V, IC=1mA 40 - -
VCE=10V, IC=10mA 50 - 200
DC Current Gain * hFE
VCE=10V, IC=50mA 45 - -
VCE=10V, IC=100mA 40 - -
VCE(sat) 1 IC=1mA, IB=0.1mA - - 0.4
Collector-Emitter Saturation Voltage * VCE(sat) 2 IC=10mA, IB=1mA - - 0.5 V
VCE(sat) 3 IC=50mA, IB=5mA - - 0.75
Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1mA - - 0.75 V
Transition Frequency fT VCE=10V, IC=10mA, f=10MHz 20 - - MHz
Collector Output Capacitance Cob VCB=20V, IE=0, f=1MHz - - 7 pF
Input Capacitance Cib VEB=0.5V, IC=0, f=1MHz - - 130 pF
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%

2008. 3. 10 Revision No : 2 1/2
MMBTA44

2008. 3. 10 Revision No : 2 2/2